High Responsivity Phototransistors Based on Few-Layer ReS2 for Weak Signal Detection

2D transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light–matter interactions. To fully explore their potential in photoconductive detectors, high responsivity is required. Here, high responsivity phototransistors based o...

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Published in:Advanced functional materials Vol. 26; no. 12; pp. 1938 - 1944
Main Authors: Liu, Erfu, Long, Mingsheng, Zeng, Junwen, Luo, Wei, Wang, Yaojia, Pan, Yiming, Zhou, Wei, Wang, Baigeng, Hu, Weida, Ni, Zhenhua, You, Yumeng, Zhang, Xueao, Qin, Shiqiao, Shi, Yi, Watanabe, Kenji, Taniguchi, Takashi, Yuan, Hongtao, Hwang, Harold Y., Cui, Yi, Miao, Feng, Xing, Dingyu
Format: Journal Article
Language:English
Published: United States Blackwell Publishing Ltd 22-03-2016
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Summary:2D transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light–matter interactions. To fully explore their potential in photoconductive detectors, high responsivity is required. Here, high responsivity phototransistors based on few‐layer rhenium disulfide (ReS2) are presented. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88 600 A W−1, which is a record value compared to other individual 2D materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few‐layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications. High responsivity phototransistors based on few‐layer rhenium disulfide (ReS2) are presented. The maximum attainable photoresponsivity can reach as high as 88 600 A W−1. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications.
Bibliography:ArticleID:ADFM201504408
ark:/67375/WNG-1752KPJW-C
Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering - No. DE-AC02-76SF00515
istex:6A683C8ABF503B9A52CAB3074BBE379EF0427DF8
USDOE Office of Science (SC)
AC02-76SF00515
SLAC-PUB-16588
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201504408