SnS and SnS2 thin films deposited using a spin-coating technique from intramolecularly coordinated organotin sulfides
Synthesis and applications of organotin(II) sulfide ({2,6‐(Me2NCH2)2C6H3}Sn)2(μ‐S) (1), organotin(II) thiophenolate {2,6‐(Me2NCH2)2C6H3}Sn(SPh) (2) and organotin(IV) heptasulfide {2,6‐(Me2NCH2)2C6H3}2Sn2S7 (3) as potential single‐source precursors (SSPs) for the deposition of SnS or SnS2 thin films...
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Published in: | Applied organometallic chemistry Vol. 29; no. 3; pp. 176 - 180 |
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Main Authors: | , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Blackwell Publishing Ltd
01-03-2015
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Subjects: | |
Online Access: | Get full text |
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Summary: | Synthesis and applications of organotin(II) sulfide ({2,6‐(Me2NCH2)2C6H3}Sn)2(μ‐S) (1), organotin(II) thiophenolate {2,6‐(Me2NCH2)2C6H3}Sn(SPh) (2) and organotin(IV) heptasulfide {2,6‐(Me2NCH2)2C6H3}2Sn2S7 (3) as potential single‐source precursors (SSPs) for the deposition of SnS or SnS2 thin films using a spin‐coating method are reported. Compounds 1, 2 and 3 differ either by tin oxidation state or by Sn:S ratio (Sn:S = 2:1 in 1, 1:1 in 2 and 2:7 in 3). It is shown that compound 1 is not a suitable SSP for thin‐film fabrication using the spin‐coating process because of its incomplete decomposition at annealing temperature. However, compounds 2 and 3 seem to be promising SSPs for spin‐coating of amorphous semiconducting thin films of SnS and SnS2, respectively. Copyright © 2015 John Wiley & Sons, Ltd.
Application of intramolecularly coordinated organotin(II) sulfide ({2,6‐(Me2NCH2)2C6H3}Sn)2(μ‐S) (1), organotin(II) thiophenolate {2,6‐(Me2NCH2)2C6H3}Sn(SPh) (2) and organotin(IV) heptasulfide {2,6‐(Me2NCH2)2C6H3}2Sn2S7 (3) as potential single‐source precursors (SSPs) for deposition of SnS or SnS2 thin films using a spin‐coating method is reported. While 1 is not a suitable SSP, 2 and 3 were successfully applied for the preparation of amorphous semiconducting thin films of SnS and SnS2, respectively. |
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Bibliography: | Supporting info item ark:/67375/WNG-GFBC6ZN7-0 ArticleID:AOC3267 istex:038563D47FB02FF5FB50DF4EFD8B7FDC5A939DA5 |
ISSN: | 0268-2605 1099-0739 |
DOI: | 10.1002/aoc.3267 |