Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique

• Published in: Electronics and communications in Japan Vol. 98; no. 6; pp. 8 - 15
• Main Authors: IWASAKI, TAKURO, ONO, TOSHIRO, OTANI, YOHEI, FUKUDA, YUKIO, OKAMOTO, HIROSHI
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 01-06-2015
• Subjects: conductance technique; Ge-MIS; interface state; MIS
• ISSN: 1942-9533; 1942-9541
• DOI: 10.1002/ecj.11655

SUMMARY
Ge‐MIS structures have attracted attention as next‐generation CMOS devices. We have reported that a GeNx/Ge structure with a low interface state density can be made by the electron cyclotron resonance (ECR) plasma technique, and that the interface state density of Ge‐MIS structures can be evaluated through characteristic analysis in the inversion region even at room temperature. In this report, we evaluate the interface state density of p‐type and n‐type GeNx/Ge structures using the conductance technique at low temperature and characteristic analysis at room temperature, and the related process dependences. We have successfully evaluated the interface characteristics of GeNx/Ge structures. The interface state density was systematically distributed with respect to the midgap, and the density near the midgap was close to that of the GeO2/Ge structure.