Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor

• Published in: Japanese Journal of Applied Physics Vol. 54; no. 5
• Main Authors: Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 07-04-2015
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.54.051001

In this study, we performed growth of GaN layers using Ga2O vapor synthesized from Ga and H2O vapor. In this process, we employed H2O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. In the synthesis reaction of Ga2O, a Ga2O3 whisker formed and covered Ga, which impeded the synthesis reaction of Ga2O. The formation of the Ga2O3 whisker was suppressed in H2 ambient at high temperatures. Then, we adopted this process to supply a group III precursor and obtained an epitaxial layer. X-ray diffraction (XRD) measurement revealed that the epitaxial layer was single-crystalline GaN. Growth rate increased linearly with Ga2O partial pressure and reached 104 µm/h.