A wideband supply modulator for 20MHz RF bandwidth polar PAs in 65nm CMOS

A wideband supply modulator for 20MHz RF bandwidth polar PAs in 65nm CMOS

A wideband modulator for a 20 MHz bandwidth polar modulated PA is presented which achieves a maximum efficiency of 87.5% and a small signal -3 dB bandwidth of 285 MHz. Realized in 65 nm CMOS, it consists of a cascoded nested Miller compensated linear amplifier and a class D switching amplifier. It c...

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Bibliographic Details
Published in:2008 IEEE Symposium on VLSI Circuits pp. 92 - 93
Main Authors: Shrestha, R., Van der Zee, R.A.R., de Graauw, A.J.M., Nauta, B.
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2008
Subjects:
Bandwidth
CMOS and cascoded nested Miller
Impedance
Modulation
power amplifier
Power amplifiers
Power generation
Radio frequency
supply modulator
Switches
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Description
Summary:A wideband modulator for a 20 MHz bandwidth polar modulated PA is presented which achieves a maximum efficiency of 87.5% and a small signal -3 dB bandwidth of 285 MHz. Realized in 65 nm CMOS, it consists of a cascoded nested Miller compensated linear amplifier and a class D switching amplifier. It can deliver 22.7 dBm output power to a 5.3 Omega load. With a switching frequency of 118 MHz, the output switching ripple is 4.3 mVrms.
ISBN:1424418046
9781424418046
ISSN:2158-5601
2158-5636
DOI:10.1109/VLSIC.2008.4585964