Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes

• Published in: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) pp. 288 - 292
• Main Authors: Binder, Andrew T., Pickrell, Greg W., Allerman, Andrew A., Dickerson, Jeramy R., Yates, Luke, Steinfeldt, Jeffrey, Glaser, Caleb, Crawford, Mary H., Armstrong, Andrew, Sharps, Paul, Kaplar, Robert J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 07-11-2021
• Subjects: Conferences; etch-and-regrowth; Junction Barrier Schottky; Leakage currents; Photonic band gap; power devices; Rectifiers; Schottky diodes; Silicon compounds; vertical GaN diode; Voltage
• DOI: 10.1109/WiPDA49284.2021.9645135

This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage near 1500 V was achieved at ~ 1 mA reverse leakage, with a sub 1 V turn-on and a specific on-resistance of 10 mΩ-cm 2 . This result is compared to other reported JBS devices in the literature and our device demonstrates the lowest leakage slope at high reverse bias. A large initial leakage current is present near zero-bias which is attributed to a combination of inadequate etch-damage removal and passivation induced leakage current.