Wavelength tuning in InGaN/GaN light-emitting diodes with strain-induced through nanosphere lithography

Nano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to make the devices with four colors emission on the same wafer.

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Bibliographic Details
Published in:	2017 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors:	Sung-Wen Huang Chen, Sheng-Wen Wang, Kuo-Bin Hong, Yu-Lin Tsai, An-Jye Tzou, You-Chen Chu, Po-Tsung Lee, Chien-Chung Lin, Hao-Chung Kuo
Format:	Conference Proceeding
Language:	English
Published:	The Optical Society 01-05-2017
Subjects:	Image color analysis Light emitting diodes Nanoscale devices Nanostructures Photonic band gap Strain Tuning
Online Access:	Get full text
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Description
Summary:	Nano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to make the devices with four colors emission on the same wafer.
DOI:	10.1364/CLEO_SI.2017.STh3N.1