Radiation Characterization of Commercial GaN Devices

Radiation Characterization of Commercial GaN Devices

Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Three different studies were performed: 1) a prelimina...

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Bibliographic Details
Published in:2011 IEEE Radiation Effects Data Workshop pp. 1 - 5
Main Authors: Harris, R. D., Scheick, L. Z., Hoffman, J. P., Thrivikraman, T., Jenabi, M., Yonggyu Gim, Miyahira, T.
Format: Conference Proceeding
Language:English
Published: IEEE 01-07-2011
Subjects:
Gallium nitride
Logic gates
Protons
Radiation effects
Semiconductor device measurement
Threshold voltage
Voltage measurement
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Summary:Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 55 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 55 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in any of the tests performed in this study.
ISBN:1457712814
9781457712814
ISSN:2154-0519
DOI:10.1109/REDW.2010.6062526