Role of the deep parasitic bipolar device in mitigating the single event transient phenomenon

Role of the deep parasitic bipolar device in mitigating the single event transient phenomenon

It was found that the single event transient (SET) phenomenon in logic circuits strongly depends on doping concentrations. We think that two parasitic bipolar devices located under a MOS gate with low channel doping concentration suppress SET. Radiation induced electrons are transferred from a drain...

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Bibliographic Details
Published in:2009 IEEE International Reliability Physics Symposium pp. 936 - 939
Main Authors: Mikami, N., Nakauchi, T., Oyama, A., Kobayashi, H., Usui, H.
Format: Conference Proceeding
Language:English
Published: IEEE 01-01-2009
Subjects:
Alpha particles
Circuit testing
Doping
Error analysis
Logic circuit
Logic circuits
Monitoring
Neutrons
parasitic bipolar transistor
Performance evaluation
Resistors
SER
SET
SEU
Single event transient
Single event upset
soft error rate
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Description
Summary:It was found that the single event transient (SET) phenomenon in logic circuits strongly depends on doping concentrations. We think that two parasitic bipolar devices located under a MOS gate with low channel doping concentration suppress SET. Radiation induced electrons are transferred from a drain to a source. As a result, SET can be reduced without implementing any extra circuit area.
ISBN:9781424428885
1424428882
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2009.5173384