Preparation of Heusler thin films: The quaternary alloy Co2Fe0.5Mn0.5Si

• Published in: Physica status solidi. A, Applications and materials science Vol. 205; no. 10; pp. 2298 - 2301
• Main Authors: Ebke, D., Thomas, A., Hütten, A., Balke, B., Felser, C., Schmalhorst, J., Reiss, G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01-10-2008; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 72.25.−b; 75.70.−i; 78.70.Dm; 85.75.−d; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic transport in condensed matter; Exact sciences and technology; Magnetic properties and materials; Magnetic properties of monolayers and thin films; Magnetic properties of surface, thin films and multilayers; Physics; Spin polarized transport; Buffer layer; Quaternary alloys; Annealing; Spin polarization; Iron alloys; XRD; Texture; Thin films; Cathode sputtering; Silicon alloys; Tunnelling magnetoresistance; Manganese alloys; Heusler alloys; Tunnel junction; Magnetic materials; Cobalt alloys; Radiofrequency sputtering; Transition element alloys; Magnetic properties
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200778803

In this work the basic strategies for the preparation of Co2Mn0.5Fe0.5Si as an example for Heusler alloy thin films will be described. Texture and magnetic properties of these films will be discussed, especially with regard to different buffer layers and annealing temperatures. Finally, we will show the integration of Heusler thin films into magnetic tunnel junctions (MTJs) and calculate the effective spin polarization. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)