Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors

• Published in: 2017 International Conference on Applied Electronics (AE) pp. 1 - 4
• Main Authors: Yermolaev, D. M., Khmyrova, I., Polushkin, E. A., Kovalchuk, A. V., Gavrilenko, V. I., Maremyanin, K. V., Maleev, N. A., Ustinov, V. M., Zemlyakov, V. E., Bespalov, V. A., Egorkin, V. I., Popov, V. V., Shapoval, S. Yu
• Format: Conference Proceeding
• Language: English
• Published: University of West Bohemia 01-09-2017
• Subjects: Detectors; FET array; floating electrode; Frequency measurement; HEMTs; Logic gates; plasma waves; Temperature measurement; Terahertz radiation
• DOI: 10.23919/AE.2017.8053630

Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations in the HEMT's channel. The peculiarities of THz response of the detector in question including an enhanced noise-equivalent power were demonstrated.