Photoelectric characteristics of Schottky diode based on a Ge/Si core/shell nanowire

Photoelectric characteristics of Schottky diode based on a Ge/Si core/shell nanowire

Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid...

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Bibliographic Details
Published in:2015 9th International Conference on Sensing Technology (ICST) pp. 187 - 190
Main Authors: Suh, Dongwoo, Chen, Lin, Lu, Wei
Format: Conference Proceeding Journal Article
Language:English
Published: IEEE 01-12-2015
Subjects:
Current density
Devices
Electrical junctions
Ge/Si
Germanium
infrared
Mathematical model
Nanoscale devices
Nanostructure
nanowire
Nanowires
Photoconductivity
photodetector
Photodiodes
Schottky diodes
sensor
Silicon
Silicon substrates
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Summary:Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid infrared of 3 μm. The barrier of the present nanowire Schottky photodiode isj 1.5 volts. We scrutinized the electrical characteristics of the nanoscale Schottky junction both at forward and reverse bias ranges with thermionic model.
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SourceType-Conference Papers & Proceedings-2
ISSN:2156-8073
DOI:10.1109/ICSensT.2015.7438389