Contact model based on TCAD-experimental interactive algorithm

• Published in: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 238 - 241
• Main Authors: Feng, Peijie, Kim, Jiseok, Cho, Jin, Pandey, Shesh Mani, Narayanan, Sudarshan, Tng, Michelle, Liu, Bingwu, Banghart, Edmund, Zhu, Baofu, Zhao, Pei, Rahman, Muhammad, Park, Yumi, Jiang, Liu, Benistant, Francis
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 01-09-2015
• Subjects: Algorithms; Barrier Height; Computational modeling; Computer simulation; Contact; Contact resistance; Data models; Devices; Doping; FinFET; FinFETs; Interactive; Interactive Algorithm; Mathematical model; Mathematical models; Schottky Contact; Semiconductor process modeling; Semiconductors; Sensitivity; TCAD
• ISBN: 1467378585; 9781467378581
• ISSN: 1946-1569; 1946-1577
• DOI: 10.1109/SISPAD.2015.7292303

This work demonstrated a novel method utilizing Sentaurus Technology Computer Aided Design simulation along with experiments to intermediately extract Schottky barrier height and contact resistance in FinFETs. The proposed algorithm can automatically calibrate contact model based on measurement data. This interactive contact model is also capable of prediction of contact resistance sensitivity including key process features such as implant energy, dose and thermal process based on a design of experiment splits. This robust, physical and efficient contact model provides insightful understandings of the metal-semiconductor contact in FinFETs. It can be easily implemented in simulation tools for device design in state-of-art semiconductor technology development.