300mm wafer level sulfur monolayer doping for III-V materials

300mm wafer level sulfur monolayer doping for III-V materials

We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303 ohms/sq with 8% uniformity. Mono-layer doping was achieved via molecular doping of sulfur and conventional annealing for dopant drive-in. Chemical...

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Bibliographic Details
Published in:2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) pp. 451 - 454
Main Authors: Loh, W.-Y, Lee, R. T. P., Tieckelmann, R., Orzali, T., Sapp, B., Hobbs, C., Papa Rao, S. S., Fuse, K., Sato, M., Fujiwara, N., Chang, L., Uchida, H.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2015
Subjects:
Annealing
Chemicals
Doping
Indium gallium arsenide
Junctions
Monolayer Doping
Nanoscale
Shallow Junctions
Silicon
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Summary:We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303 ohms/sq with 8% uniformity. Mono-layer doping was achieved via molecular doping of sulfur and conventional annealing for dopant drive-in. Chemical reactivity, cost, environmental, safety and health aspects (all of which are crucial for high volume manufacturing) were considered in the chemical down-selection. MLD demonstrates molecular-scale control with conformal, nondestructive introduction of dopants to III-V materials.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2015.7164438