Design of GFET-based active modulators leveraging device performance reproducibility conditions

• Published in: 2023 38th Conference on Design of Circuits and Integrated Systems (DCIS) pp. 1 - 6
• Main Authors: Pacheco-Sanchez, Anibal, Ramos-Silva, J. Noe, Mavredakis, Nikolaos, Ramirez-Garcia, Eloy, Jimenez, David
• Format: Conference Proceeding
• Language: English
• Published: IEEE 15-11-2023
• Subjects: Baseband; Binary phase shift keying; Frequency modulation; GFET; Graphene; high-frequency; modulation; Performance evaluation; PSK; QPSK; Reproducibility of results; Stability analysis; traps
• ISSN: 2640-5563
• DOI: 10.1109/DCIS58620.2023.10335972

High-data rate modulators, namely phase-shift keying (PSK) and quadrature (Q) PSK, are designed in this work based on an experimentally-calibrated compact graphene field-effect transistor (GFET) model. The circuits consist of a one single device for the PSK design and of two GFETs for the QPSK proposal. In order to diminish the unavoidable impact of traps on this emerging transistor technology, the bias conditions for the circuit operation corresponds to a trap-reduced measurement scenario where reproducible device characteristics have been experimentally obtained. This proposal exploits the device reproducibility and the multifunctional circuit capabilities of GFET technology. Hence, the outstanding inherent characteristics of GFETs in dynamic operation can be used in a high-performance application by controlling the trap-states without additional costly technology solutions.