Performance Improvement of ZnO Based ReRAM with SiCN Oxygen Reservoir

Performance Improvement of ZnO Based ReRAM with SiCN Oxygen Reservoir

In this paper, a new structure of ZnO based ReRAM with SiCN capping layer is suggested as oxygen reservoir to improve the device performances. The fabricated devices show lower set/reset voltage and stable current, compared to the device without SiCN layer. XRD spectrum show it not a crystallization...

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Bibliographic Details
Published in:2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors: Ko, Woon-San, Song, Myeong Ho, Kim, Ki-Nam, Byun, Jun-Ho, Lee, Do-Yeon, Kim, Eun-gi, Koo, Eun-A, Kwon, So-Yeon, Kim, Geun-Ho, Choi, Dong-Hyeuk, Lee, Ga-Won
Format: Conference Proceeding
Language:English
Published: IEEE 07-03-2023
Subjects:
Electrodes
II-VI semiconductor materials
Metals
Oxygen reservoir
Performance evaluation
porous
ReRAM
RRAM
SiCN
Voltage
X-ray scattering
Zinc oxide
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Summary:In this paper, a new structure of ZnO based ReRAM with SiCN capping layer is suggested as oxygen reservoir to improve the device performances. The fabricated devices show lower set/reset voltage and stable current, compared to the device without SiCN layer. XRD spectrum show it not a crystallization effect. Based on the XPS analysis results, SiCN layer seems to be a great oxygen blocking layer preventing the metal electrode from bonding with oxygen ion.
DOI:10.1109/EDTM55494.2023.10103094