Direct parameter extraction on RF-CMOS

• Published in: 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Vol. 1; pp. 271 - 274 vol.1
• Main Author: Pengg, F.X.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 2002
• Subjects: Capacitance; Circuit simulation; CMOS technology; Curve fitting; Impedance; Microwave Theory and Techniques Society; MOSFETs; Parameter extraction; Radio frequency; Semiconductor device modeling
• ISBN: 9780780372399; 0780372395
• ISSN: 0149-645X; 2576-7216
• DOI: 10.1109/MWSYM.2002.1011609

The good knowledge of all parameters of the models used with the circuit simulations is one of the major prerequisites for a successful design. This is particularly true for the design of analog radio-frequency (RF) circuits. An efficient and accurate method to directly extract the parameters needed for accurate modeling of transistors in a standard CMOS sub-micron technology for RF-applications is presented. The paper concentrates on the extraction procedure, with emphasis on its simplicity, hence excluding fitting or optimization, and on the accuracy of its results. The extracted parameters are applied to a first order nonquasistatic (NQS) model and the simulation results compared with measurements. Excellent agreement between simulations and measurements up to 50GHz is achieved.