Flip-chip mounted, Ku band power amplifier compliant with space applications

• Published in: 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Vol. 3; pp. 1389 - 1392 vol.3
• Main Authors: Vendier, O., Fraysse, J.-P., Schaffauser, C., Paillard, M., Drevon, C., Cazaux, J.-L., Floriot, D., Caillas-Devignes, N., Blanck, H., Auxemery, P., de Ceuninck, W., Petersen, R., Haese, N., Rolland, P.-A.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 2002
• Subjects: Fingers; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MMICs; Packaging; Power amplifiers; Space technology; Temperature; Thermal management
• ISBN: 9780780372399; 0780372395
• ISSN: 0149-645X; 2576-7216
• DOI: 10.1109/MWSYM.2002.1012114

Following the trends of today's increased power density into power components arena, latest developments on advanced thermal management at component level are presented. Power flip chip technology was applied to commercial HB20P heterostructure bipolar transistor technology from UMS. Results of flip-chip mounted high power amplifier on Aluminum Nitride, packaged in a space compatible micro-package are discussed.