Enabling 3D NAND Trench Cells for Scaled Flash Memories

Enabling 3D NAND Trench Cells for Scaled Flash Memories

3D Trench cells with a vertical flat channel have been proposed to increase the cell density over 3D NAND gate-all-around (GAA). In this work, we investigate the device characteristics of Trench cells. In absence of curvature, Trench cells exhibit inferior program and erase in comparison to a GAA re...

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Bibliographic Details
Published in:2023 IEEE International Memory Workshop (IMW) pp. 1 - 4
Main Authors: Rachidi, S., Ramesh, S., Breuil, L., Tao, Z., Verreck, D., Donadio, G. L., Arreghini, A., Bosch, G. Van Den, Rosmeulen, M.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2023
Subjects:
3D NAND
Computer architecture
Fabrication
Flash
GAA
Gallium arsenide
Logic gates
Memory
Metals
Performance evaluation
Three-dimensional displays
Trench
XY-scaling
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Summary:3D Trench cells with a vertical flat channel have been proposed to increase the cell density over 3D NAND gate-all-around (GAA). In this work, we investigate the device characteristics of Trench cells. In absence of curvature, Trench cells exhibit inferior program and erase in comparison to a GAA reference. However, the memory window of Trench cells is significantly improved with channel width scaling, gate stack engineering and metal gate integration. This study also provides a basis for design and fabrication of future ultradense 3D NAND memories based on the Trench architecture.
ISSN:2573-7503
DOI:10.1109/IMW56887.2023.10145992