Investigation of the Failure Mechanism of InGaAs-pHEMT under High Temperature Operating Life Tests

• Published in: 2021 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 4
• Main Authors: Tateno, Yasunori, Nakata, Ken, Oya, Akio, Matsuda, Keita, Komatsu, Yoshihide, Osada, Shinichi, Hirata, Masafumi, Ishiyama, Shigeyuki, Yoda, Toshiki, Nitta, Atsushi, Sato, Tomio
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-03-2021
• Subjects: Degradation; Degradation Mechanism; Failure Mechanism; High Temperature Operating Life Tests; InGaAs-pHEMT; Logic gates; Performance evaluation; Reliability; Temperature; Temperature dependence; Temperature measurement; Voltage measurement
• ISSN: 1938-1891
• DOI: 10.1109/IRPS46558.2021.9405166

The purpose of this study is to investigate the physical mechanism of degradation of InGaAs-pHEMT under high temperature operating life (HTOL) tests. Using the measurements of the S-parameters before and after HTOL tests, we found that gate-source and gate-drain capacitance changed as a result of electron capture in the surface recess region. We also performed an operational reliability simulation based on the Reaction-Diffusion Degradation Model. From the results, we concluded that surface depassivation is the main cause of the degradation of InGaAs-pHEMT.