Low ESL High Voltage Si-IPD as Enabler for 140 W LD Output and Less 1 ns FWHM LiDAR Module

• Published in: 2021 IEEE 71st Electronic Components and Technology Conference (ECTC) pp. 256 - 262
• Main Authors: Jatlaoui, Mohamed Mehdi, Aubry, Yves, Gaborieau, Sophie, Longuet, Stephane, Dubos, Laurent, Nakano, Hiroyuki, Matsuoka, Takahiro, Kushima, Takahito, Ohara, Tatsuya, Ando, Shota
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2021
• Subjects: FWHM; GaN switches; High voltage Silicon interposer; High-voltage techniques; Inductance; Laser radar; LD output; LiDAR module; Loop inductance; miniaturization; Pulse measurements; Silicon; Switches; Three-dimensional displays
• ISSN: 2377-5726
• DOI: 10.1109/ECTC32696.2021.00051

The work presented here is driven by the motivation to design and manufacture a LiDAR module generating a short pulse with high output LD (Laser Diode) power peak. As will be demonstrated in this paper, this was made possible by the use of high voltage Si-IPD (Silicon Integrated Passive Device) with embedded trench capacitors as a mechanical holder and offering amazing interconnection flexibility to optimize the placement of the different module components. Compared to classical PCB based solutions, the Si-IPD made it possible the realization of low parasitic inductance by optimizing the current distribution paths between the switching devices, the passive components and the 3D assembly of the module. Noise and surge reduction along with efficiency improvement of the power electronics system is observed.