A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

• Published in: 2020 IEEE International Electron Devices Meeting (IEDM) pp. 16.2.1 - 16.2.4
• Main Authors: Oh, Youngsun, Kim, Munhwan, Choi, Wonchul, Choi, Hana, Jeon, Honghyun, Seok, Junho, Choi, Yujung, Jung, Jaejin, Yoo, Kwisung, Park, Donghyuk, Kim, Yitae, Koh, Kyung-min, Lee, Jesuk, Moon, Chang-Rok, Ahn, JungChak
• Format: Conference Proceeding
• Language: English
• Published: IEEE 12-12-2020
• Subjects: CMOS image sensors; Image resolution; Mirrors; Mobile applications; Optical filters; Photonics; Signal to noise ratio
• ISSN: 2156-017X
• DOI: 10.1109/IEDM13553.2020.9371936

A 0.8μm-pitch 108 megapixels (Mp) ultrahigh-resolution CMOS image sensor has been demonstrated for mobile applications. The Nonacell was developed through a 3x3 color filter and 1x3 shared pixel structures which can be operated the 3 binning mode to achieve 12Mp resolution and improve low-illuminance signal-to-noise ratio (SNR) characteristic. The full-well capacity (FWC) of Nonacell was achieved up to 18,000e- using FD-shared dual conversion gain (CG) technology, and excellent high-illuminance SNR was demonstrated.