A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation

• Published in: 2020 IEEE Symposium on VLSI Circuits pp. 1 - 2
• Main Authors: Shin, Hoyoung, Kim, Jisung, Kang, Shinwuk, Kwak, Sungung
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2020
• Subjects: Boosting; Charge pumps; High-voltage techniques; Internet of Things; Low-power electronics; Temperature sensors
• ISSN: 2158-5636
• DOI: 10.1109/VLSICircuits18222.2020.9162813

In this paper, we present an Embedded Flash Memory (eFlash) based on logic-28nm process for Internet of Things (IoT) product. IoT product requires high performance, low power operation and immune to the high temperature. Based on a power-efficient 28nm process technology, we implemented the ultra-deep sleep mode (<1uA). Through the WL Boosting and Adaptive Control Sensing Scheme (WBACS), we achieved fast read speed (3.2Gbit/s) and robust sensing margin. High voltages can be generated stably in ultra-low power IO 1.1V by using Double-Boost-Clock (DBC). Through the technique that positive/negative Bi-Directional Charge Pump (BDCP), three high voltages required for Program/Erase operation can be generated from two charge pumps. As a result, we have developed an area competitive eFlash IP (Size 1.27 mm 2 ). Based on these technologies, it was confirmed that 28nm-eFlash operates at ultra-low power (Core-VDD 0.85V & IO 1.1V) and high temperature (T j 150°C) successfully. And these technologies were mounted in the world's first 28nm process MCU-Connectivity One Chip Solution.