A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

The development and behavior of a new model for Motorola's LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previou...

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Bibliographic Details
Published in:1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) Vol. 2; pp. 419 - 422 vol.2
Main Authors: Curtice, W.R., Pla, J.A., Bridges, D., Liang, T., Shumate, E.E.
Format: Conference Proceeding Journal Article
Language:English
Published: IEEE 1999
Subjects:
Capacitance
Circuit simulation
Current measurement
FETs
Isothermal processes
Nonlinear equations
Radio frequency
Silicon
Temperature
Voltage
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Description
Summary:The development and behavior of a new model for Motorola's LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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ISBN:0780351355
9780780351356
ISSN:0149-645X
DOI:10.1109/MWSYM.1999.779792