Forming-Free, Self-Compliance WTe2-Based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-Density Memory

• Published in: IEEE electron device letters Vol. 44; no. 2; pp. 253 - 256
• Main Authors: Abbas, Haider, Ali, Asif, Li, Jiayi, Tun, Thaw Tint Te, Ang, Diing Shenp
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-02-2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Behavioral sciences; CBRAM; Data storage; Device-to-device communication; forming-free; High density; low-voltage switching; Memory devices; Memory management; Nonvolatile memory; Random access memory; Resistance; RRAM; self-compliance; self-limited; Switches; Switching; Thermal conductivity; uniformity
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2022.3231646

In this work, forming-free and self-limited resistive switching characteristics are demonstrated in the transition-metal-chalcogenide-based conductive bridge RAM devices. Owing to the choice of a suitable solid electrolyte, the proposed WTe2-based devices present excellent switching characteristics offering highly desirable attributes such as high pulse endurance (><inline-formula> <tex-math notation="LaTeX">2\times 10 </tex-math></inline-formula>7 cycles) and stable data retention (10 years at 72°C). The devices also present excellent device-to-device and cycle-to-cycle uniformity which is highly desirable for the practical implementation of resistive random access memory (RRAM) devices in large crossbar arrays. The demonstration of robust and highly repeatable multilevel switching further provides multibit data storage capability for high-density memory.