Raman, photoluminescence, and SEM studies of CdS and CdTe films grown by RF sputtering and laser physical vapor deposition

• Published in: Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) pp. 510 - 515
• Main Authors: Bohn, R.G., Yuxin Li, Meilun Shao, Tabory, C.N., Zhirong Feng, Fischer, A., Compaan, A.D.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 1993
• Subjects: Chemical vapor deposition; Heterojunctions; Laser theory; Optical films; Optical pulses; Photoluminescence; Pulsed laser deposition; Radio frequency; Raman scattering; Sputtering
• ISBN: 0780312201; 9780780312203
• DOI: 10.1109/PVSC.1993.347128

Polycrystalline films of CdS, CdTe, as well as CdS/CdTe heterojunctions grown by RF magnetron sputtering and by pulsed laser physical vapor deposition are studied using the techniques of SEM, photoluminescence (PL), and Raman scattering. By correlating grain sizes and spectral features we have been able to optimize growth temperatures. Optical studies of the buried heterojunction and the spectral response of the cell have led to optimization of post-growth anneal times and layer thicknesses.< >