17 G directly modulated datacom VCSELs

17 G directly modulated datacom VCSELs

The next generation 850 nm datacom VCSEL to go into production will be the 17 G VCSEL. It is not certain that direct modulation will be suitable given the reliability, supply voltage, and temperature range required. This paper is a first look at VCSELs designed and targeted for production 17 G use....

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Bibliographic Details
Published in:2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science pp. 1 - 2
Main Authors: Johnson, R.H., Serkland, D.K.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2008
Subjects:
Absorption
Apertures
Bonding
Doping
Implants
Optical design
Optical devices
Quantum capacitance
Threshold current
Vertical cavity surface emitting lasers
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Summary:The next generation 850 nm datacom VCSEL to go into production will be the 17 G VCSEL. It is not certain that direct modulation will be suitable given the reliability, supply voltage, and temperature range required. This paper is a first look at VCSELs designed and targeted for production 17 G use. The design is discussed and LIV and small signal frequency response is presented.
ISBN:1557528594
9781557528599
DOI:10.1109/CLEO.2008.4551302