Method for a High-Rate Solution Deposition of Zn(O,S) Buffer Layer for High-Efficiency Cu(In,Ga)Se2 -Based Solar Cells

• Published in: IEEE journal of photovoltaics Vol. 6; no. 5; pp. 1321 - 1326
• Main Authors: Hariskos, Dimitrios, Jackson, Philip, Hempel, Wolfram, Paetel, Stefan, Spiering, Stefanie, Menner, Richard, Wischmann, Wiltraud, Powalla, Michael
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01-09-2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Buffer layers; Cu(In; Ga)(Se; high efficiency; high-rate deposition; II-VI semiconductor materials; Photovoltaic cells; S) buffer layer; S)2 (CIGS) thin-film solar cell; solution growth; Substrates; Surface treatment; Zinc; Zn(O
• ISSN: 2156-3381; 2156-3403
• DOI: 10.1109/JPHOTOV.2016.2589361

We present a method for high-rate solution growth of the Zn(O,S) buffer layer to achieve deposition rates and material consumptions far below the standard Zn(O,S) and CdS deposition method. We replace the organosulfide thiourea by the more quickly decomposable thioacetamide and control the reaction kinetics by the use of chelating ligands and ammonia. We characterize the produced layers by secondary neutral mass spectrometry, X-ray diffraction, and optical transmission. For cell preparation, we use high-efficiency Cu(In,Ga)Se 2 with an alkali-modified surface, as well as industrially relevant inline absorber material. We realize a certified 21% cell efficiency with the standard thiourea-based Zn(O,S) and first cells with over 19 % with the high-rate Zn(O,S) buffer.