A highly attenuative CMOS LNA at 5-6 GHz using negative GM circuit for UWB applications

• Published in: Microwave and optical technology letters Vol. 55; no. 4; pp. 894 - 899
• Main Authors: Koirala, Nischal, Anand, A., Pokharel, Ramesh K., Kanaya, H., Yoshida, K.
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc., A Wiley Company 01-04-2013; Wiley Subscription Services, Inc
• Subjects: cross-coupled transistors; interstage matching; Local area networks; low-noise amplifier; negative resistance; resistive feedback; Studies; ultra-wide band
• ISSN: 0895-2477; 1098-2760
• DOI: 10.1002/mop.27464

This paper presents a UWB low noise amplifier (LNA) for 3.1–10.6 GHz applications, with an excellent attenuation at 5–6 GHz for rejecting the wireless local area network (WLAN) interference. A method of canceling the on‐chip inductive resistance has been employed in this work to make the inductor an extremely low loss inductor with a very high quality factor. The fully integrated UWB LNA is designed in the CMOS 0.18 μm Taiwan Semiconductor Manufacturing Company (TSMC) technology. Measurement results show that the LNA achieves attenuation of up to 39 dB at 5.4 GHz, while the 1 dB power gain is 10 dB. The measured return losses (S11 and S22) are better than −7.4 dB while the noise figure is 5–6.1 dB in the range of operation. The measured input P1dB and IIP3 measured at 6.5 GHz are −12.2 and 2 dBm, respectively. The designed LNA occupies an area of 1.105 × 0.68 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:894–899, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27464