DOE study on etching rate of silicon nitride (Si3N4) layer via RIE nitride etching process

• Published in: 2008 IEEE International Conference on Semiconductor Electronics pp. 649 - 652
• Main Authors: Ghazali, N.H., Soetedjo, H., Ngah, N.A., Yusof, A., Dolah, A., Yahya, M.R.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-11-2008
• Subjects: Chemical vapor deposition; Design methodology; Dielectric materials; DOE; Dry etching; Fabrication; Plasma applications; Radio frequency; Silicon; silicon nitride; Statistical analysis; US Department of Energy
• ISBN: 142443873X; 9781424425600; 9781424438730; 1424425603
• DOI: 10.1109/SMELEC.2008.4770409

In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF 4 / O 2 gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O 2 and CF 4 flow rate of 5-10 sccm and 40-50 sccm respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.