Integrated ODP metrology as an APC enabler for complex high aspect ratio 3D deep trench device structures

• Published in: 2006 IEEE International Symposium on Semiconductor Manufacturing pp. 339 - 342
• Main Authors: Schmidt, B., Reinig, P., Komarov, S., Hetzer, D., Likhachev, D., Funk, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-09-2006
• Subjects: Etching; Ion beams; Metrology; Monitoring; Process control; Radar measurements; Random access memory; Sampling methods; Semiconductor device modeling; Timbre
• ISBN: 4990413806; 9784990413804
• ISSN: 1523-553X
• DOI: 10.1109/ISSM.2006.4493101

The current technology node and the complexity of device design and processing demand metrology systems that can provide profile and underlying layer information in one measurement; and perform this task with high accuracy and precision. Additionally, manufacturability and yield management requirements increase the need for fast, reliable, non-destructive and economical measurements that allow for extensive wafer sampling plans. The work in this paper shows promise that integrated optical digital profilometry (iODP) is a fast, non-destructive metrology solution to address these aforementioned challenges. In the following discussion, we present results of a characterization experiment where ODP is employed to measure 3-dimensional (3D) DRAM device structures on the leading edge technology node at four different process steps, including high aspect ratio multi-layer deep trench layers.