Interposer technology for high band width interconnect applications

• Published in: 2013 IEEE 63rd Electronic Components and Technology Conference pp. 323 - 328
• Main Authors: Detalle, Mikael, La Manna, A., De Vos, J., Nolmans, P., Daily, R., Civale, Y., Beyer, G., Beyne, E.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-05-2013
• Subjects: Capacitance; Capacitors; Electrodes; Insulators; Metals; Silicon; Through-silicon vias
• ISBN: 9781479902330; 1479902330
• ISSN: 0569-5503; 2377-5726
• DOI: 10.1109/ECTC.2013.6575590

Silicon Interposer provides very high density interconnect combining through Silicon vias and fine wiring. The concept reported in this paper is implementing integrated power supply layers with decoupling metal insulator metal decoupling capacitor to enhance signal integrity. In addition an upscale damascene process was used to fabricate high density and high bandwidth routing interconnect. A detailed characterization of the warpage behavior along the processing steps and electrical characterization of interposer TSV and BEOL are reported.