Degradation behaviour of polysilicon high voltage thin film transistors

The degradation characteristics of polycrystalline silicon Off-set Drain High Voltage Thin Film Transistors (OD-HVTFTs) are reported. The results demonstrate a pronounced kink in the transfer characteristics at high gate bias, due to degradation of the offset region. This effect is particularly noti...

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Bibliographic Details

Published in:	Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) pp. 219 - 222
Main Authors:	Mugnier, M., Manhas, S.K., Chandra Sekhar, D., Krishnan, S., Cross, R., Sankara Narayanan, E.M., De Souza, M.M., Flores, D., Vellvehi, M., Millan, J.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2002
Subjects:	Active matrix liquid crystal displays Annealing Degradation Glass Low voltage Silicon Stress Temperature Thin film transistors Threshold voltage
Online Access:	Get full text
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