On-wafer Measurements of Responsivity of FET-based subTHz Detectors

• Published in: 2018 IEEE/MTT-S International Microwave Symposium - IMS pp. 946 - 948
• Main Authors: Kopyt, P., Salski, B., Zagrajek, P., Bauwens, M., Obrebski, D., Marczewski, J., Barker, N. S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2018
• Subjects: Antenna measurements; CMOSFETs; Detectors; HEMTs; MODFETs; MOSFET; Nondestructive testing; Probes; Sensitivity; Submillimeter wave detectors and measurements; Transmission line measurements
• ISSN: 2576-7216
• DOI: 10.1109/MWSYM.2018.8439544

This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector's effective aperture, which can be a source of large variation between responsivity measurements of various FET-based detectors often cited in the literature. It seems that the presented method can be useful at making direct comparisons between responsivity of various devices (e.g. MOSFETs, HEMTs etc.). As a demonstration, the sub-THz responsivity of FET devices fabricated using three different processes has been measured in the WR-3 band and compared.