Lifetime Enhancement under High Frequency NBTI measured on Ring Oscillators

Lifetime Enhancement under High Frequency NBTI measured on Ring Oscillators

In this paper, we studied the frequency degradation of ring oscillators (ROs) fabricated using 130nm technology. We demonstrate that for ROs operating at high temperatures in the frequency-range of 100MHz to 3GHz, Negative bias temperature instability (NBTI) is the dominant frequency degradation mec...

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Bibliographic Details
Published in:2006 IEEE International Reliability Physics Symposium Proceedings pp. 289 - 293
Main Authors: Nigam, T., Harris, E.B.
Format: Conference Proceeding
Language:English
Published: IEEE 01-03-2006
Subjects:
Degradation
Frequency measurement
NBTI
Niobium compounds
Nitrogen
relaxation
Ring Oscillator
Ring oscillators
Stress
Switches
Switching circuits
Switching frequency
Titanium compounds
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Summary:In this paper, we studied the frequency degradation of ring oscillators (ROs) fabricated using 130nm technology. We demonstrate that for ROs operating at high temperatures in the frequency-range of 100MHz to 3GHz, Negative bias temperature instability (NBTI) is the dominant frequency degradation mechanism. The NBTI-lifetime measured on ROs is 4 decades longer than that of DC-stressed devices. A recovery of RO frequency is observed when stress is reduced, similar to stress relaxation in DC stress mode. Based on RO degradation data measured up to 3 GHz, we conclude that for circuits operating in a continuous switching mode, NBTI will not be a show stopper
ISBN:9780780394988
0780394984
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251230