III-V: Replacing Si or more than Moore?

III-V: Replacing Si or more than Moore?

Frequency scaling is coming to an end because of thermal limits as shown in Fig. 1. As an alternative nFET channel material, III-V compound semiconductor has been under intensive investigation in the recent years, hope to provide higher performance and lower power devices. In this paper, we review t...

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Bibliographic Details
Published in:2010 Symposium on VLSI Technology pp. 149 - 150
Main Author: Yanning Sun
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2010
Subjects:
HEMTs
International Electron Devices Meeting
Logic gates
MODFETs
MOSFETs
Silicon
Online Access:Get full text
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Summary:Frequency scaling is coming to an end because of thermal limits as shown in Fig. 1. As an alternative nFET channel material, III-V compound semiconductor has been under intensive investigation in the recent years, hope to provide higher performance and lower power devices. In this paper, we review the status of current III-V research, and discuss the challenges and opportunities for "Moore" and "more than Moore" applications.
ISBN:9781424454518
1424454514
ISSN:0743-1562
DOI:10.1109/VLSIT.2010.5556206