Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

In this work, the TDDB mechanism in high-voltage nMOSFETs with high-density of pre-existing defects in the gate oxide is investigated. In contrast to the traditional nMOSFETs with very few defects in the gate oxide, the additional hole trapping through the stress-induced generated defects close to t...

Full description

Saved in:
Bibliographic Details
Published in:2017 IEEE International Reliability Physics Symposium (IRPS) pp. DG-6.1 - DG-6.3
Main Authors: Guangfan Jiao, Sungkweon Baek, Kab-jin Nam, Sung-Il Chang, Siyeon Cho, Kauerauf, Thomas, Chanho Lee, Seung-Uk Han, Jin-Soak Kim, Eun-Ae Chung, Yoo-Cheol Shin, Junhee Lim, Yu-Gyun Shin, Kihyun Hwang
Format: Conference Proceeding
Language:English
Published: IEEE 01-04-2017
Subjects:
Electric breakdown
Electron traps
Flash memories
Flash memory
Impact ionization
Logic gates
MOSFET
Peripheral nMOSFETs
Stress
TDDB
Thick Oxide
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, the TDDB mechanism in high-voltage nMOSFETs with high-density of pre-existing defects in the gate oxide is investigated. In contrast to the traditional nMOSFETs with very few defects in the gate oxide, the additional hole trapping through the stress-induced generated defects close to the gate side not only induce longer fail time, but also induce smaller voltage acceleration factor and lower 10-year V max .
ISSN:1938-1891
DOI:10.1109/IRPS.2017.7936363