Variable junction temperature analysis in Silicon IMPATT diode

This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure design...

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Bibliographic Details

Published in:	2013 3rd International Conference on Instrumentation, Communications, Information Technology and Biomedical Engineering (ICICI-BME) pp. 76 - 79
Main Authors:	Arshad, T. S. M., Othman, M. A., Yasin, N. Y. M., Taib, S. N., Napiah, Z. A. F. M., Hussain, M. N., Rahim, Y. Abd, Pee, A. N. Che, Ismail, M. M., Misran, M. H., Said, M. A. Meor, Sulaiman, H. A., Ramlee, R. A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-11-2013
Subjects:	electric field Electric fields Fabrication IMPATT diode IV characteristics junction temperature Junctions Millimeter wave technology mobility Semiconductor diodes Silicon Temperature
Online Access:	Get full text
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