Variable junction temperature analysis in Silicon IMPATT diode

Variable junction temperature analysis in Silicon IMPATT diode

This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure design...

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Bibliographic Details
Published in:2013 3rd International Conference on Instrumentation, Communications, Information Technology and Biomedical Engineering (ICICI-BME) pp. 76 - 79
Main Authors: Arshad, T. S. M., Othman, M. A., Yasin, N. Y. M., Taib, S. N., Napiah, Z. A. F. M., Hussain, M. N., Rahim, Y. Abd, Pee, A. N. Che, Ismail, M. M., Misran, M. H., Said, M. A. Meor, Sulaiman, H. A., Ramlee, R. A.
Format: Conference Proceeding
Language:English
Published: IEEE 01-11-2013
Subjects:
electric field
Electric fields
Fabrication
IMPATT diode
IV characteristics
junction temperature
Junctions
Millimeter wave technology
mobility
Semiconductor diodes
Silicon
Temperature
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Summary:This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field increases while the carrier mobility decreases in higher junction temperature.
DOI:10.1109/ICICI-BME.2013.6698468