InGaAs/InP avalanche photodiode performance effect using variation guard ring structures

• Published in: 2013 3rd International Conference on Instrumentation, Communications, Information Technology and Biomedical Engineering (ICICI-BME) pp. 120 - 123
• Main Authors: Taib, S. N., Othman, M. A., Napiah, Z. A. F. M., Hussain, M. N., Yasin, N. Y. M., Arshad, T. S. M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-11-2013
• Subjects: Anodes; Avalanche photodiodes; Avalanche photodiodes (APDs); Breakdown voltage; guard ring; I-V characteristics; Indium gallium arsenide; Indium phosphide; InGaAs/InP; N-type; Optical fiber communication; P-type; Structural rings
• DOI: 10.1109/ICICI-BME.2013.6698477

Avalanche Photodiode based on InGaAs/InP was chosen because of the needs of high-speed optical receivers and have their own advantages on high sensitivity. In this project, we focused on the effect of guard ring on InGaAs/InP avalanche photodiodes and its performance. Two types of guard ring structures are designed in APD and their current-voltage (I-V) characteristics (electric field profiles) are simulated and analysed. This paper investigates the effects of guard-ring (GR) structures on the performance of InGaAs/InP avalanche photodiodes (APDs). Two type InGaAs/InP-APDs based on P+/N-well guard ring and n+/p-substrate guard ring are designed and their electric field profiles are simulated and analyzed. Current current-voltage characteristics (I-V characteristics) are measured and compared.