Terahertz and infrared conductivity of large-area graphene

Terahertz and infrared conductivity of large-area graphene

We use terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy to investigate carrier dynamics in large-area chemical-vapor-deposition-grown graphene, and observed that the Fermi level of graphene can be tuned by both thermal annealing and electrical gating.

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Bibliographic Details
Published in:2011 International Conference on Infrared, Millimeter, and Terahertz Waves pp. 1 - 2
Main Authors: Lei Ren, Qi Zhang, Booshehri, L. G., Haroz, E. H., Arikawa, T., Nanot, S., Kono, J., Zhengzong Sun, Zheng Yan, Jun Yao, Zhong Jin, Tour, J. M.
Format: Conference Proceeding
Language:English
Published: IEEE 01-10-2011
Subjects:
Annealing
Conductivity
Logic gates
Silicon
Spectroscopy
Substrates
Ultrafast optics
Online Access:Get full text
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Description
Summary:We use terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy to investigate carrier dynamics in large-area chemical-vapor-deposition-grown graphene, and observed that the Fermi level of graphene can be tuned by both thermal annealing and electrical gating.
ISBN:1457705109
9781457705106
ISSN:2162-2027
DOI:10.1109/irmmw-THz.2011.6105040