Non equilibrium entropy generation in nano scale MOSFET transistor based a nonlinear DPL heat conduction model

• Published in: 2018 9th International Renewable Energy Congress (IREC) pp. 1 - 6
• Main Authors: Echouchene, F., Bel Mabrouk, Hafedh
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-03-2018
• Subjects: Dual-phase-lag model; Entropy generation; Finite element method; MOSFET
• ISSN: 2378-3451
• DOI: 10.1109/IREC.2018.8362447

In the present work, the nonequilibrium entropy production under the effect of the dual-phase-lag heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. A nanoscale heat source term and different boundary conditions are included and compares the simulation results with those obtained from the phonon Boltzmann transport equation (BTE) and the Fourier law. The transient Dual-phase lag (DPL) model is solved using finite-element scheme for space and semi-implicit finite-difference for time. The effect of the Knudsen number in local entropy production is investigated. Also, the difference between the equilibrium and the nonequilibrium under the effect of the dual-phase-lag heat conduction model is studied. It is shown that the entropy production cannot be described using the classical form of the equilibrium entropy production for a high Knudsen number and in transient state. It was found that transient entropy generation obtained by the DPL model exhibits an oscillatory behavior for MOSFET with internal heat generation.