Ge-on-Si photodetectors with 33 GHz bandwidth implemented by RPCVD

Ge-on-Si photodetectors with 33 GHz bandwidth implemented by RPCVD

We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20 mum-diameter at a wavelength of 1550 nm.

Saved in:
Bibliographic Details
Published in:2008 34th European Conference on Optical Communication pp. 1 - 2
Main Authors: Dongwoo Suh, Sanghoon Kim, Gyungock Kim, In Gyoo Kim, Jiho Joo
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2008
Subjects:
Atomic force microscopy
Bandwidth
Chemical vapor deposition
CMOS technology
Optical devices
Optical waveguides
Photodetectors
PIN photodiodes
Silicon
Substrates
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20 mum-diameter at a wavelength of 1550 nm.
ISBN:1424422272
9781424422272
ISSN:1550-381X
DOI:10.1109/ECOC.2008.4729210