Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates

Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates

CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compare...

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Bibliographic Details
Published in:Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 pp. 28 - 29
Main Authors: Qiqing Ouyang, Min Yang, Holt, J., Panda, S., Huajie Chen, Utomo, H., Fischetti, M., Rovedo, N., Jinghong Li, Klymko, N., Wildman, H., Kanarsky, T., Costrini, G., Fried, D.M., Bryant, A., Ott, J.A., Meikei Ieong, Chun-Yung Sung
Format: Conference Proceeding
Language:English
Published: IEEE 2005
Subjects:
CMOS technology
Epitaxial growth
Etching
Germanium silicon alloys
Hybrid junctions
Phonons
Ring oscillators
Scanning electron microscopy
Silicon germanium
Substrates
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Summary:CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe.
ISBN:4900784001
9784900784000
ISSN:0743-1562
DOI:10.1109/.2005.1469199