Scanning near-field photon emission microscopy

• Published in: 2008 IEEE International Reliability Physics Symposium pp. 575 - 579
• Main Authors: Isakov, D., Geinzer, T., Tio, A., Phang, J.C.H., Zhang, Y., Balk, L.J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-04-2008
• Subjects: Apertures; Failure analysis; Integrated circuit technology; Optical microscopy; Optical scattering; Optical sensors; Photonic integrated circuits; Probes; Spatial resolution; Stimulated emission
• ISBN: 1424420490; 9781424420490
• ISSN: 1541-7026; 1938-1891
• DOI: 10.1109/RELPHY.2008.4558947

A Scanning Near-field Photon Emission Microscope (SNPEM) for monitoring photon emission sites with a spatial resolution of between 50 to 200 nm is described. A protrusion type probe with a base diameter larger than a wavelength is proposed as a good compromise between resolution and sensitivity. Photon emissions from silicon pn junction and n-MOSFET have been detected with resolution clearly better than the far-field PEM (FFPEM). Features in photon emission distribution smaller than 200 nm were revealed in spite the fact that metal lines prevented the SNPEM probe to reach near-field condition with an actual emission source.