Characterization of the electronic mobility dependence on frequency and bias in AsGa devices

• Published in: MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference pp. 165 - 168
• Main Authors: Chaibi, M., Fernandez, T., Rafael, G., Garcia, J.A., Mediavilla, A., Aghoutane, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2006
• Subjects: Capacitance; Electron mobility; Frequency measurement; Gallium arsenide; Intrusion detection; MESFETs; Microwave devices; Pulse measurements; Scattering parameters; Transconductance
• ISBN: 9781424400874; 1424400872
• ISSN: 2158-8473; 2158-8481
• DOI: 10.1109/MELCON.2006.1653062

In this paper, a novel technique to study the evolution of the electronic mobility in GaAs microwave MESFET's devices versus both, frequency and bias condition is presented. The technique employs scattering parameters measurement over the frequency band of interest along with DC and pulsed transconductance and output conductance device measurements. The examination of the presented results shows the need to include the variation of mobility with DC bias and frequency in device nonlinear models