Electrical characterization of ultra-thin SOI films: comparison of the pseudo-MOSFET and Hg-FET techniques

• Published in: 2005 IEEE International SOI Conference Proceedings pp. 59 - 60
• Main Authors: Allibert, F., Bresson, N., Bellatreche, K., Maunand-Tussot, C., Cristoloveanu, S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: CMOS digital integrated circuits; CMOS technology; Fluctuations; Laboratories; MOSFET circuits; Pulse measurements; Random access memory; Semiconductor films; Semiconductor process modeling; Ultra wideband technology
• ISBN: 0780392124; 9780780392120
• ISSN: 1078-621X; 2577-2295
• DOI: 10.1109/SOI.2005.1563532

As the MOSFETs dimensions are scaled down, following the ITRS roadmap, the need for SOI wafers with ultra-thin Si films (UTF) becomes acute. Characterization of these wafers with simple, process-independent, and fast turnaround methods is very important. In this paper, we present for the first time 3 key aspects: (i) properties of UTF down to 10 nm thickness; (ii) comparison of thinning techniques (sacrificial oxidation vs. SCI); and (iii) comparison of pseudo-MOSFET and Hg-FET methods for UTF.