As-grown Ge pin photodiodes on Si with low dark current achieved by hydrogen desorption technique

As-grown Ge pin photodiodes on Si with a low dark current (4.6 × 10 - 2 A/cm 2 at -1 V) are achieved using a hydrogen desorption technique. This technique should enable the use of Ge in the CMOS backend process.

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Bibliographic Details
Published in:	7th IEEE International Conference on Group IV Photonics pp. 266 - 268
Main Authors:	Takada, Yoichi, Suzuki, Ryota, Sungbong Park, Osaka, Jiro, Ishikawa, Yasuhiko, Wada, Kazumi
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-09-2010
Subjects:	Annealing Dark current PIN photodiodes Rough surfaces Silicon Surface roughness Surface treatment
Online Access:	Get full text
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