As-grown Ge pin photodiodes on Si with low dark current achieved by hydrogen desorption technique

As-grown Ge pin photodiodes on Si with low dark current achieved by hydrogen desorption technique

As-grown Ge pin photodiodes on Si with a low dark current (4.6 × 10 - 2 A/cm 2 at -1 V) are achieved using a hydrogen desorption technique. This technique should enable the use of Ge in the CMOS backend process.

Saved in:
Bibliographic Details
Published in:7th IEEE International Conference on Group IV Photonics pp. 266 - 268
Main Authors: Takada, Yoichi, Suzuki, Ryota, Sungbong Park, Osaka, Jiro, Ishikawa, Yasuhiko, Wada, Kazumi
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2010
Subjects:
Annealing
Dark current
PIN photodiodes
Rough surfaces
Silicon
Surface roughness
Surface treatment
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:As-grown Ge pin photodiodes on Si with a low dark current (4.6 × 10 - 2 A/cm 2 at -1 V) are achieved using a hydrogen desorption technique. This technique should enable the use of Ge in the CMOS backend process.
ISBN:1424463440
9781424463442
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2010.5643359