Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors

• Published in: 2017 IEEE International Electron Devices Meeting (IEDM) pp. 8.1.1 - 8.1.4
• Main Authors: Daus, A., Han, S., Knobelspies, S., Cantarella, G., Vogt, C., Munzenrieder, N., Troster, G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2017
• Subjects: Aluminum oxide; Inverters; Iron; Logic gates; Polyimides; Substrates; Thin film transistors
• ISSN: 2156-017X
• DOI: 10.1109/IEDM.2017.8268349

Ultra-thin p-type chalcogenide glass Ge 2 Sb 2 Te 5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al 2 O 3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO 4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.